• DocumentCode
    2217360
  • Title

    The quantum effects in MOSFET´s: threshold voltage creep

  • Author

    Quan, Wuyun ; Kim, Dae M.

  • Author_Institution
    Computational Sci., Korea Inst. for Adv. Study, Seoul, South Korea
  • Volume
    2
  • fYear
    2001
  • fDate
    22-25 Oct. 2001
  • Firstpage
    901
  • Abstract
    The phenomenon that the inversion charge is sublinear to gate voltage is presented and modeled via VTH-creep. VTH-creep can be as large as 50% of the onset threshold voltage, showing its importance in modeling the I-V characteristics of MOSFETs.
  • Keywords
    MOSFET; semiconductor device models; I-V characteristics; MOSFET; gate voltage; inversion charge; quantum effects; threshold voltage creep; Creep; Data mining; Equivalent circuits; MOSFET circuits; Positron emission tomography; Quantum capacitance; Threshold voltage; Voltage measurement; Writing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State and Integrated-Circuit Technology, 2001. Proceedings. 6th International Conference on
  • Print_ISBN
    0-7803-6520-8
  • Type

    conf

  • DOI
    10.1109/ICSICT.2001.982040
  • Filename
    982040
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2217360