DocumentCode :
2217360
Title :
The quantum effects in MOSFET´s: threshold voltage creep
Author :
Quan, Wuyun ; Kim, Dae M.
Author_Institution :
Computational Sci., Korea Inst. for Adv. Study, Seoul, South Korea
Volume :
2
fYear :
2001
fDate :
22-25 Oct. 2001
Firstpage :
901
Abstract :
The phenomenon that the inversion charge is sublinear to gate voltage is presented and modeled via VTH-creep. VTH-creep can be as large as 50% of the onset threshold voltage, showing its importance in modeling the I-V characteristics of MOSFETs.
Keywords :
MOSFET; semiconductor device models; I-V characteristics; MOSFET; gate voltage; inversion charge; quantum effects; threshold voltage creep; Creep; Data mining; Equivalent circuits; MOSFET circuits; Positron emission tomography; Quantum capacitance; Threshold voltage; Voltage measurement; Writing;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State and Integrated-Circuit Technology, 2001. Proceedings. 6th International Conference on
Print_ISBN :
0-7803-6520-8
Type :
conf
DOI :
10.1109/ICSICT.2001.982040
Filename :
982040
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2217360
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