2217385

The Dependence Of Ramp Rate On Breakdown Voltage And The Relation Of Breakdown Charge Density To Breakdown Field For Voltage Ramp Testing Of Oxides For Various Companies

Tanner, Danelle M. ; Messick, Cleston

Sandia National Laboratories

1993

24-27 Oct 1993

227

229

Breakdown voltage; Charge measurement; Current measurement; Density measurement; Design for quality; Laboratories; Leakage current; Q measurement; Semiconductor device testing; Virtual manufacturing;

English

ieee

Integrated Reliability Workshop Final Report, 1993 International

conf

10.1109/IRWS.1993.666321

666321