• DocumentCode
    2217385
  • Title

    The Dependence Of Ramp Rate On Breakdown Voltage And The Relation Of Breakdown Charge Density To Breakdown Field For Voltage Ramp Testing Of Oxides For Various Companies

  • Author

    Tanner, Danelle M. ; Messick, Cleston

  • Author_Institution
    Sandia National Laboratories
  • fYear
    1993
  • fDate
    24-27 Oct 1993
  • Firstpage
    227
  • Lastpage
    229
  • Keywords
    Breakdown voltage; Charge measurement; Current measurement; Density measurement; Design for quality; Laboratories; Leakage current; Q measurement; Semiconductor device testing; Virtual manufacturing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Integrated Reliability Workshop Final Report, 1993 International
  • Type

    conf

  • DOI
    10.1109/IRWS.1993.666321
  • Filename
    666321
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2217385