The simulation analysis of cross-talk behavior in SOI mixed-mode integrated circuits

Author

Guoyan, Zhang ; Huailin, Liao ; Ru, Huang ; Zhang Xing ; Yangyuan, Wang

Author_Institution

Inst. of Microelectron., Peking Univ., Beijing, China

Volume

2

fYear

2001

fDate

22-25 Oct. 2001

Firstpage

916

Abstract

With the two-dimensional (2D) TMA medici simulator, the systematic analysis of cross-talk behavior is presented for different SOI mixed-mode integrated circuits such as PD (partially-depleted), FD (fully-depleted) and BC (body-contacted) structures. It is found that the substrate-grounded SOI structure can lower the noise coupling to a large extent compared to the substrate-floating one. Besides, the efficiency of different strategies for reducing cross-talk such as trench isolation, capacitive guard ring and distance separating is also investigated. The results are very important for evaluating cross-talk effects in low-noise coupling SOI mixed-mode IC´s.

Keywords

integrated circuit modelling; integrated circuit noise; isolation technology; mixed analogue-digital integrated circuits; silicon-on-insulator; 2D TMA medici simulator; SOI mixed-mode integrated circuits; body-contacted; capacitive guard ring; cross-talk behavior; distance separating; fully-depleted; low-noise coupling SOI mixed-mode IC; noise coupling; partially-depleted; simulation analysis; substrate-grounded SOI structure; trench isolation; Analog integrated circuits; Analytical models; Circuit simulation; Coupling circuits; Crosstalk; Digital integrated circuits; Frequency; Integrated circuit noise; Medical simulation; Silicon on insulator technology;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated-Circuit Technology, 2001. Proceedings. 6th International Conference on

Print_ISBN

0-7803-6520-8

Type

conf

DOI

10.1109/ICSICT.2001.982044

Filename

982044