• DocumentCode
    2217470
  • Title

    Ka-Band MEMS Switches on CMOS Grade Silicon with a Polyimide Interface Layer

  • Author

    Ponchak, George E. ; Varaljay, Nicholas C. ; Papapolymerou, John

  • Author_Institution
    NASA Glenn Research Center, 21000 Brookpark Rd., MS 54/5, Cleveland, OH 44135
  • fYear
    2003
  • fDate
    Oct. 2003
  • Firstpage
    971
  • Lastpage
    974
  • Abstract
    For the first time, RF MEMS switches on CMOS grade Si with a polyimide interface layer are fabricated and characterized. At Ka-Band (36.6 GHz), an insertion loss of 0.52 dB and an isolation of 20 dB is obtained.
  • Keywords
    CMOS technology; Fabrication; Integrated circuit technology; Microswitches; Microwave circuits; Polyimides; Radio frequency; Radiofrequency microelectromechanical systems; Silicon; Switches;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Conference, 2003 33rd European
  • Conference_Location
    Munich, Germany
  • Print_ISBN
    1-58053-834-7
  • Type

    conf

  • DOI
    10.1109/EUMA.2003.341125
  • Filename
    4143181
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2217470