Title :
Ka-Band MEMS Switches on CMOS Grade Silicon with a Polyimide Interface Layer
Author :
Ponchak, George E. ; Varaljay, Nicholas C. ; Papapolymerou, John
Author_Institution :
NASA Glenn Research Center, 21000 Brookpark Rd., MS 54/5, Cleveland, OH 44135
Abstract :
For the first time, RF MEMS switches on CMOS grade Si with a polyimide interface layer are fabricated and characterized. At Ka-Band (36.6 GHz), an insertion loss of 0.52 dB and an isolation of 20 dB is obtained.
Keywords :
CMOS technology; Fabrication; Integrated circuit technology; Microswitches; Microwave circuits; Polyimides; Radio frequency; Radiofrequency microelectromechanical systems; Silicon; Switches;
Conference_Titel :
Microwave Conference, 2003 33rd European
Conference_Location :
Munich, Germany
Print_ISBN :
1-58053-834-7
DOI :
10.1109/EUMA.2003.341125
