Title :
Electrical and structural properties of PZT/ST films
Author :
Lee, Sang Heon ; Choi, Yong
Author_Institution :
Dept. of Electron. Eng., Sun Moon Univ., Asan
Abstract :
The heterolayered thick/thin structure consisting of Pb(Zr0.52Ti0.48)O3 (PZT) and SrTiO3(ST) were fabricated by a sol-gel process. We investigated the effect of phase, composition, and interfacial state of SrTiO3 thin films layer at interface between PZT thick films. The structural and the dielectric properties were investigated for effect of various stacking sequence of sol-gel-prepared SrTiO3 layer at interface of PZT thick films. The insertion of SrTiO3 interlayer yielded PZT thick films with homogeneous and dense grain structure regardless of the number of SrTiO3 layers. These results suggested that there is coexistence of PZT phase and SrTiO3 phase or presence of the modified SrTiO3 at the interfaces between PZT thick. The leakage current density of the PZT/SrTiO3-7 film is less that 1.7 x 10-9 A/cm2 at S V.
Keywords :
crystal microstructure; current density; dielectric thin films; interface states; lead compounds; leakage currents; sol-gel processing; strontium compounds; PZT; PZT thick films; SrTiO3; SrTiO3 - System; SrTiO3 interlayer; SrTiO3 thin films; dense grain structure; dielectric properties; electrical properties; heterolayered thick structure; heterolayered thin structure; interfacial state; leakage current density; sol-gel process; structural properties; Ceramics; Coatings; Dielectric substrates; Dielectric thin films; Powders; Printing; Sun; Thick films; Transistors; X-ray scattering; PZT; dielectric propery; heterolayer; sol-gel;
Conference_Titel :
Nanotechnology Materials and Devices Conference, 2006. NMDC 2006. IEEE
Conference_Location :
Gyeongju
Print_ISBN :
978-1-4244-0540-4
Electronic_ISBN :
978-1-4244-0541-1
DOI :
10.1109/NMDC.2006.4388964
