Title :
Simulation 70 nm MOSFET by a 2-D full-band Monte Carlo device simulator with a quantum mechanical correction to the potential
Author :
Du, Gang ; Sun, Lei ; Liu, Xiaoyan ; Han, Ruqi
Author_Institution :
Inst. for Microelectron., Peking Univ., Beijing, China
Abstract :
The characterization of a 70nm MOSFET is simulated using a 2-D full-band Monte Carlo device simulator that has included the effect of quantum mechanical correction of the potential. The influence of quantum mechanical correction of the potential to the device characterization is studied.
Keywords :
MOSFET; Monte Carlo methods; semiconductor device models; 2D full-band Monte Carlo simulation; 70 nm; MOSFET; quantum mechanical potential correction; semiconductor device; Boltzmann equation; CMOS technology; Distribution functions; Hot carriers; MOSFET circuits; Monte Carlo methods; Particle scattering; Quantum mechanics; Silicon; Sun;
Conference_Titel :
Solid-State and Integrated-Circuit Technology, 2001. Proceedings. 6th International Conference on
Print_ISBN :
0-7803-6520-8
DOI :
10.1109/ICSICT.2001.982046
