DocumentCode
2217514
Title
Simulation 70 nm MOSFET by a 2-D full-band Monte Carlo device simulator with a quantum mechanical correction to the potential
Author
Du, Gang ; Sun, Lei ; Liu, Xiaoyan ; Han, Ruqi
Author_Institution
Inst. for Microelectron., Peking Univ., Beijing, China
Volume
2
fYear
2001
fDate
22-25 Oct. 2001
Firstpage
924
Abstract
The characterization of a 70nm MOSFET is simulated using a 2-D full-band Monte Carlo device simulator that has included the effect of quantum mechanical correction of the potential. The influence of quantum mechanical correction of the potential to the device characterization is studied.
Keywords
MOSFET; Monte Carlo methods; semiconductor device models; 2D full-band Monte Carlo simulation; 70 nm; MOSFET; quantum mechanical potential correction; semiconductor device; Boltzmann equation; CMOS technology; Distribution functions; Hot carriers; MOSFET circuits; Monte Carlo methods; Particle scattering; Quantum mechanics; Silicon; Sun;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State and Integrated-Circuit Technology, 2001. Proceedings. 6th International Conference on
Print_ISBN
0-7803-6520-8
Type
conf
DOI
10.1109/ICSICT.2001.982046
Filename
982046
Link To Document