Fabricated poly-Si thin film transistor with anodizing Al film using nanoindentation

Author

Han, Jin-Woo ; Kim, Jong-Yeon ; Kan, Hee-Jin ; Moon, Hyun-Chan ; Choi, Seong-Ho ; Park, Kwang-Bum ; Kim, Tae-Ha ; Seo, Dae-Shik

Volume

1

fYear

2006

fDate

22-25 Oct. 2006

Firstpage

698

Lastpage

699

Abstract

This letter reports the fabrication of polycrystalline silicon thin-film transistors (poly-Si TFT) on glass substrates using Al oxide films by anodizing. The a-Si films were deposited with mixture gas of argon and helium to minimize the argon incorporation into the film. The a-Si films were then laser crystallized using XeCl excimer laser irradiation and a four-mask-processed poly-Si TFTs were fabricated with fully self-aligned top gate structure.

Keywords

alumina; amorphous semiconductors; anodisation; elemental semiconductors; excimer lasers; indentation; laser materials processing; masks; nanotechnology; semiconductor thin films; silicon; thin film transistors; xenon compounds; Al₂O₃; Al₂O₃ - Binary; He-Ar; He-Ar - Binary; Si; Si - Interface; XeCl; XeCl - Binary; XeCl excimer laser irradiation; a-Si films; aluminium film anodization; argon; four-mask-process; gas mixture; glass substrates; helium; laser crystallization; nanoindentation; poly-Si TFT; polycrystalline silicon thin film transistor; self-aligned top gate structure; Argon; Crystallization; Gas lasers; Glass; Helium; Optical device fabrication; Semiconductor films; Silicon; Substrates; Thin film transistors; Poly-Si; anodizing; nanoindentation;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanotechnology Materials and Devices Conference, 2006. NMDC 2006. IEEE

Conference_Location

Gyeongju

Print_ISBN

978-1-4244-0540-4

Electronic_ISBN

978-1-4244-0541-1

Type

conf

DOI

10.1109/NMDC.2006.4388967

Filename

4388967