DocumentCode
2217543
Title
Monte Carlo simulation of low-energy electron scattering and energy dissipation distribution
Author
Ren, Liming ; Chen, Baoqin ; Tan, Zhenyu
Author_Institution
Microelectron. R&D Center, Acad. Sinica, Beijing, China
Volume
2
fYear
2001
fDate
22-25 Oct. 2001
Firstpage
928
Abstract
A physical model describing the scattering processes of low-energy electrons is proposed. The Monte Carlo method was applied to simulate the complex scattering processes of Gaussian-distribution low-energy electrons in the PMMA-substrate target. The influences of different exposure conditions on energy dissipation density were investigated to obtain the regularity of energy dissipation distribution.
Keywords
Gaussian distribution; Monte Carlo methods; electron beam lithography; polymers; EBL; Gaussian-distribution low-energy electrons; Monte Carlo simulation; PMMA-substrate target; electron beam lithography; energy dissipation density; energy dissipation distribution; exposure condition influence; low-energy electron scattering; Discrete event simulation; Electron beams; Energy dissipation; Energy resolution; Gaussian processes; Interpolation; Lithography; Microelectronics; Particle scattering; Power engineering and energy;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State and Integrated-Circuit Technology, 2001. Proceedings. 6th International Conference on
Print_ISBN
0-7803-6520-8
Type
conf
DOI
10.1109/ICSICT.2001.982047
Filename
982047
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