Current induced subthreshold trap generation, degradation, and breakdown in the thin oxide

In this paper, the complete time dependent dielectric breakdown characteristics, the relaxation behavior, generation probabilities and/or rates of two traps, and establish the relationship between the trap generation time constants and the time-to-breakdown have been investigated. The analytical results show that the generation time constant for the induced subthreshold and intrinsic traps are all proportional to the time to breakdown, therefore the time to breakdown under low electric field can be estimated through the time constant, of induced subthreshold trap, and the measuring time can be significantly reduced.