Implementation of early monitor by advanced ebeam metrology for charging damage failure mechanism

Author

Richter, Maximilian ; Buttner, D. ; Schilling, U. ; Heinelt, T. ; Worbs, T. ; Kraiss, T. ; Erik, W. ; Seng, S.Y. ; Siew Kion Chan ; Hee Shing Chua ; Keng Chye Yeo ; Koh, P. ; Hiang, Stephanie Kok ; Tang

Author_Institution

Infineon Technol. Dresden GmbH, Dresden, Germany

fYear

2011

fDate

27-28 Sept. 2011

Firstpage

1

Lastpage

5

Abstract

Based on failure analysis data the estimated failure mechanism in capacitor like device structures was created on wafer in Front End of Line. In the study the optimal process step for electron beam inspection (EBI) on Hermes Microvision eScanlite system was identified within various process steps. Finally an electron beam inspection monitor for early warning was established specifically to identify this fail mechanism with ADC (Automated Defect Classification) and statistical process control.

Keywords

electron beam applications; failure analysis; inspection; statistical process control; Hermes Microvision eScanlite system; advanced ebeam metrology; automated defect classification; capacitor like device structures; charging damage failure mechanism; electron beam inspection; failure analysis; statistical process control; wafer; Capacitors; Electron beams; Failure analysis; Inspection; Logic gates; Monitoring; Tungsten; ADC; FA; FEOL; HMI; Hermes Microvision; SPC; Voltage contrast; automatic defect classification; charging damage; defect density; eScanlite; electrical defects; electrical fail mechanism; failure analysis; front end of line; inspection; inspection monitor; inspection system; statistical process control;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Conference Dresden (SCD), 2011

Conference_Location

Dresden

Print_ISBN

978-1-4577-0431-4

Type

conf

DOI

10.1109/SCD.2011.6068690

Filename

6068690