Title :
Implementation of early monitor by advanced ebeam metrology for charging damage failure mechanism
Author :
Richter, Maximilian ; Buttner, D. ; Schilling, U. ; Heinelt, T. ; Worbs, T. ; Kraiss, T. ; Erik, W. ; Seng, S.Y. ; Siew Kion Chan ; Hee Shing Chua ; Keng Chye Yeo ; Koh, P. ; Hiang, Stephanie Kok ; Tang
Author_Institution :
Infineon Technol. Dresden GmbH, Dresden, Germany
Abstract :
Based on failure analysis data the estimated failure mechanism in capacitor like device structures was created on wafer in Front End of Line. In the study the optimal process step for electron beam inspection (EBI) on Hermes Microvision eScanlite system was identified within various process steps. Finally an electron beam inspection monitor for early warning was established specifically to identify this fail mechanism with ADC (Automated Defect Classification) and statistical process control.
Keywords :
electron beam applications; failure analysis; inspection; statistical process control; Hermes Microvision eScanlite system; advanced ebeam metrology; automated defect classification; capacitor like device structures; charging damage failure mechanism; electron beam inspection; failure analysis; statistical process control; wafer; Capacitors; Electron beams; Failure analysis; Inspection; Logic gates; Monitoring; Tungsten; ADC; FA; FEOL; HMI; Hermes Microvision; SPC; Voltage contrast; automatic defect classification; charging damage; defect density; eScanlite; electrical defects; electrical fail mechanism; failure analysis; front end of line; inspection; inspection monitor; inspection system; statistical process control;
Conference_Titel :
Semiconductor Conference Dresden (SCD), 2011
Conference_Location :
Dresden
Print_ISBN :
978-1-4577-0431-4
DOI :
10.1109/SCD.2011.6068690
