Title :
DfT support for serial non-volatile sRAM´s
Author :
Scade, Andreas ; Schmutz, Sebastian
Author_Institution :
Anvo-Syst.-Dresden GmbH, Dresden, Germany
Abstract :
This paper gives an overview about the collaboration between test development and design of complex mixed signal devices such as nvSRAMs, with digital interface and control part; a huge analog part including oscillator, band gap, comparators, POR (power on reset) and BOR (brown out reset) circuitry; power supply monitoring, power control and charge pump; and volatile and non volatile memory arrays. Actually the final device is a trade-off between minimal chip size, design overhead and wafer sort and final test effort. Reliability is extremely important for non-volatile memories, therefore, it was useful to add special instructions and sub-circuits to support reliability testing as much as possible and to enable access to non-volatile information until end of life (EOL) of the device.
Keywords :
SRAM chips; reliability; BOR circuitry; POR circuitry; band gap; brown out reset circuitry; charge pump; comparators; digital interface; mixed signal devices; nonvolatile memory array; nvSRAM; oscillator; power control; power on reset circuitry; power supply monitoring; reliability testing; serial nonvolatile SRAM; Built-in self-test; Clocks; Nonvolatile memory; Random access memory; Registers; Voltage control; BIST; DfT; nvSRAM; reliability; serialRAM;
Conference_Titel :
Semiconductor Conference Dresden (SCD), 2011
Conference_Location :
Dresden
Print_ISBN :
978-1-4577-0431-4
DOI :
10.1109/SCD.2011.6068691