• DocumentCode
    2217599
  • Title

    DfT support for serial non-volatile sRAM´s

  • Author

    Scade, Andreas ; Schmutz, Sebastian

  • Author_Institution
    Anvo-Syst.-Dresden GmbH, Dresden, Germany
  • fYear
    2011
  • fDate
    27-28 Sept. 2011
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    This paper gives an overview about the collaboration between test development and design of complex mixed signal devices such as nvSRAMs, with digital interface and control part; a huge analog part including oscillator, band gap, comparators, POR (power on reset) and BOR (brown out reset) circuitry; power supply monitoring, power control and charge pump; and volatile and non volatile memory arrays. Actually the final device is a trade-off between minimal chip size, design overhead and wafer sort and final test effort. Reliability is extremely important for non-volatile memories, therefore, it was useful to add special instructions and sub-circuits to support reliability testing as much as possible and to enable access to non-volatile information until end of life (EOL) of the device.
  • Keywords
    SRAM chips; reliability; BOR circuitry; POR circuitry; band gap; brown out reset circuitry; charge pump; comparators; digital interface; mixed signal devices; nonvolatile memory array; nvSRAM; oscillator; power control; power on reset circuitry; power supply monitoring; reliability testing; serial nonvolatile SRAM; Built-in self-test; Clocks; Nonvolatile memory; Random access memory; Registers; Voltage control; BIST; DfT; nvSRAM; reliability; serialRAM;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Conference Dresden (SCD), 2011
  • Conference_Location
    Dresden
  • Print_ISBN
    978-1-4577-0431-4
  • Type

    conf

  • DOI
    10.1109/SCD.2011.6068691
  • Filename
    6068691