Extracting F-N stress-induced interface states in SOI NMOSFETs by forward gated-diode

The forward gated-diode R-G current method has been used to monitor the F-N stressing-induced interface traps in NMOSFET/SOI in this paper. This simple and accurate experimental method can directly give the interface trap density induced by F-N stressing effect for characterizing the device´s reliability characteristics. For the measured NMOS/SOI device with a body structure, an expected power law relationship as ΔN_ii ∼t^0.4 between the pure F-N stressing-induced interface trap density and the accumulated stressing time is obtained.