Laser formed connections for programmable wiring

Author

Bernstein, Joseph B. ; Zhang, Wei ; Nicholas, Carl H.

Author_Institution

Dept. of Mater. & Nucl. Eng., Maryland Univ., College Park, MD, USA

fYear

1998

fDate

11-14 May 1998

Firstpage

163

Lastpage

165

Abstract

Solid metallic connections have been successfully formed between two standard levels of metallization using a focused IR laser system. This new process of laser formed connections has been used to link chains with resistances of less than 0.8 Ω per connection. Commercial laser repair systems used extensively by the memory industry were employed to perform over 100000 individual links over a wide set of laser parameters without failure. This technology has the potential to replace laser fuse cutting techniques to program wiring in silicon-on-silicon, wafer scale integration (WSI), and system-on-a-chip applications. Furthermore, because it is an additive process and the passivation remains completely intact, it lends itself to redundancy with perfect yield and exceptional reliability

Keywords

CMOS integrated circuits; integrated circuit interconnections; integrated circuit metallisation; laser materials processing; wafer-scale integration; WSI; additive process; focused IR laser system; laser formed connections; metallization levels; programmable wiring; redundancy; reliability; solid metallic connections; system-on-a-chip applications; two-level metal CMOS process; wafer scale integration; yield; Circuits; Dielectrics; Inorganic materials; Laser beam cutting; Optical materials; System-on-a-chip; Thermal conductivity; Thermal expansion; Wafer scale integration; Wiring;

fLanguage

English

Publisher

ieee

Conference_Titel

Custom Integrated Circuits Conference, 1998. Proceedings of the IEEE 1998

Conference_Location

Santa Clara, CA

Print_ISBN

0-7803-4292-5

Type

conf

DOI

10.1109/CICC.1998.694928

Filename

694928