DocumentCode
2217696
Title
In-Line Monitoring of Hot Carrier Lifetime and Its Dependency on Process Parameter for Submicron High Density DRAM Manufacturing
Author
Hong, S.C. ; Shin, D.H. ; Lee, W. ; Ryu, B.-I. ; Chung, H.K.
Author_Institution
Samsung Electronics Co., Ltd.
fYear
1993
fDate
24-27 Oct 1993
Firstpage
234
Lastpage
235
Keywords
Condition monitoring; Current measurement; Degradation; Drain avalanche hot carrier injection; Electric variables measurement; Hot carriers; Length measurement; MOSFETs; Stress measurement; Time measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Integrated Reliability Workshop Final Report, 1993 International
Type
conf
DOI
10.1109/IRWS.1993.666323
Filename
666323
Link To Document