Charging damage in dual gate oxide process

Author

Jin, Y. ; Lim, H.F. ; Tong, A.F. ; Gn, F.H. ; Low, A.S. ; Teo, W.Y. ; Hou, Y.T. ; Li, M.-F.

Author_Institution

Chartered Semicond. Manuf. Ltd., Singapore, Singapore

Volume

2

fYear

2001

fDate

22-25 Oct. 2001

Firstpage

970

Abstract

Plasma charging damage in a dual gate oxide 0.25μm technology was investigated. Charging damage was identified in IMD HDP deposition and VIA process. It was found in this paper that a thick gate oxide device always shows better or equal plasma charging resistance, despite the fact that the thick gate oxide has suffered quality degradation by two-step growth. On the other hand, it is clearly demonstrated in our experiments that the dependence of charging damage on gate oxide thickness is plasma source dependent, which is in good agreement with the previous predictions by K. P Chueng [P2ID 1998, p34].

Keywords

dielectric thin films; plasma materials processing; surface charging; surface treatment; 0.25 micron; IMD HDP deposition; VIA process; charging damage; degradation; dual gate oxide process; gate oxide thickness; plasma charging resistance; thick gate oxide device; two-step growth; CMOS technology; Conductors; Degradation; Gate leakage; MOS devices; MOSFETs; Plasma devices; Plasma measurements; Plasma sources; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated-Circuit Technology, 2001. Proceedings. 6th International Conference on

Print_ISBN

0-7803-6520-8

Type

conf

DOI

10.1109/ICSICT.2001.982057

Filename

982057