• DocumentCode
    2217801
  • Title

    Influence of trapped charges on low-level leakage current in thin silicon dioxide films

  • Author

    Chen, T.P. ; Luo, Y.L.

  • Author_Institution
    Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore, Singapore
  • Volume
    2
  • fYear
    2001
  • fDate
    22-25 Oct. 2001
  • Firstpage
    974
  • Abstract
    In this work, experiments were designed to examine the influence of the trapped charges on SILC in thin SiO2 films. It is shown that the release of the trapped electrons in the gate/oxide interface region during the I-V measurement could be responsible for the negative-differential-resistance current at low fields. It is also shown that the positive trapped charges could enhance the DC component of the SILC.
  • Keywords
    dielectric thin films; electron traps; leakage currents; negative resistance; silicon compounds; DC component; I-V measurement; SILC; SiO2; SiO2 films; gate/oxide interface region; low field; low-level leakage current; negative-differential-resistance current; positive trapped charges; stress-induced leakage current; thin silicon dioxide films; trapped charges; trapped electrons; Current measurement; Design engineering; Electron traps; Leakage current; Physics; Q measurement; Semiconductor films; Silicon compounds; Stress measurement; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State and Integrated-Circuit Technology, 2001. Proceedings. 6th International Conference on
  • Print_ISBN
    0-7803-6520-8
  • Type

    conf

  • DOI
    10.1109/ICSICT.2001.982058
  • Filename
    982058
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2217801