Title :
Temperature and voltage impact on intermodulation distortion of planar barium strontium titanate varactors
Author :
Price, Tony ; Weller, Thomas ; Shen, Ya ; Gong, Xun
Author_Institution :
Center for Wireless & Microwave Inf. Syst., Univ. of South Florida, Tampa, FL, USA
Abstract :
Measured capacitance vs. voltage data along with measured 3rd-order intermodulation distortion (IMD) data at various bias and temperatures are presented for interdigital barium strontium titanate varactors. A dip/sweet spot is observed in the 3rd-order intermodulation distortion products when plotted vs. input RF power. The dips occur at RF power levels near 20 dBm and are an important consideration for large signal applications of BST varactors. Shifts in the dip are reported as the bias voltage is varied from 0-50V. Non-linear modeling methods are also discussed.
Keywords :
barium compounds; capacitance; strontium compounds; varactors; BST varactor; IMD; capacitance; interdigital barium strontium titanate varactor; intermodulation distortion; nonlinear modeling; planar barium strontium titanate varactor; temperature impact; voltage 0 V to 50 V; voltage data; voltage impact; Capacitance-voltage characteristics; Microwave circuits; Radio frequency; Temperature measurement; Varactors; Voltage measurement; barium strontium titanate; intermodulation distortion; two-tone measurements;
Conference_Titel :
Wireless and Microwave Technology Conference (WAMICON), 2012 IEEE 13th Annual
Conference_Location :
Cocoa Beach, FL
Print_ISBN :
978-1-4673-0129-9
Electronic_ISBN :
978-1-4673-0128-2
DOI :
10.1109/WAMICON.2012.6208466
