Hot carrier degradation in the integration of dual gate oxide transistor in sub-0.13um CMOS technology

Hot-carrier degradation is studied in 70A, 3.3V Dual Gate Oxide (DGO) transistors in sub-0.13um CMOS technology for embedded applications. The different device degradation characteristics induced by interface traps and interface charges are discussed. In addition, the competing effects of halo and extension implants on hot-carrier reliability in DGO transistors are investigated. Hot-carrier lifetime is found to increase with increased extension dose and angle, and to decrease with increased halo dose. However, the extension implant affects hot-carrier reliability more significantly in these DGO transistors.