Title :
Simulation models of ESD event in ICs
Author :
Lei, Jiang ; Xing, Yang ; Jiaji, Wang
Author_Institution :
Mater. Sci. & Eng. Dept., Fudan Univ., Shanghai, China
Abstract :
ESD protection becomes more and more prevalent with the development of deep sub-micron technology. ESD simulation with right models can reduce the design and test cycle of ESD protection circuit, and optimize for ESD robustness as well as device performance. Several simulation models and practical examples are described to show the application of ESD simulation in this article. Integrated models that combine process, circuit and device simulation are the trends of development.
Keywords :
VLSI; circuit simulation; electrostatic discharge; integrated circuit modelling; protection; ESD event; ESD protection; IC simulation; deep sub-micron technology; design cycle; device performance; device simulation; robustness; simulation models; test cycle; Circuit simulation; Circuit testing; Computational modeling; Discrete event simulation; Electrostatic discharge; Equations; Materials science and technology; Protection; Stress; Voltage;
Conference_Titel :
Solid-State and Integrated-Circuit Technology, 2001. Proceedings. 6th International Conference on
Print_ISBN :
0-7803-6520-8
DOI :
10.1109/ICSICT.2001.982062