Title :
Compact, infinite input resistance, wide receiving range, high-to-low voltage receiver circuits based on novel one-DMOS-FET linear level-shifting
Author :
Zhang, Yipin ; Burghartz, Joachim N.
Author_Institution :
Inst. for Microelectron. Stuttgart, Stuttgart, Germany
Abstract :
A novel, high-voltage (HV) to low-voltage (LV) linear level-shifting cell using only one DMOS Transistor and two resistors is presented. Its infinite input resistance, wide receiving range and linear HV-to-LV level-shifting characteristics make it very suitable to build CMOS/DMOS mixed-voltage receiver circuits for industrial applications. Based on the new cell, a compact, wide receiving range, differential input HV-to-LV digital receiver and a circuit arrangement for HV-to-LV analog signal transmission with optimized output swing are designed. Functionalities of the designed receivers are verified by extensive simulations and experimental measurements.
Keywords :
MOS integrated circuits; field effect transistors; resistors; CMOS-DMOS mixed-voltage receiver circuits; DMOS transistor; compact receiver circuit; high-to-low voltage receiver circuit; infinite input resistance receiver circuit; linear level-shifting cell; one-DMOS-FET linear level-shifting; resistors; wide receiving range receiver circuit; CMOS integrated circuits; CMOS technology; Logic gates; Receivers; Resistance; Threshold voltage; Transistors;
Conference_Titel :
Semiconductor Conference Dresden (SCD), 2011
Conference_Location :
Dresden
Print_ISBN :
978-1-4577-0431-4
DOI :
10.1109/SCD.2011.6068709
