The experimental investigation on stress-induced leakage current under Fowler-Nordheim constant voltage stress

In this investigation, we have presented the Stress-Induced Leakage Current (SILC) phenomenon in ultrathin gate oxide p-MOSFET under FN high field stress. The SILC in ultrathin gate oxide is proportional to exp(β · E_ox). The SILC plot of ln(J_SILC) versus E_ox is linear. The intercept and slope of this straight line of ln(J_SILC) vs. E_ox plot will change with stress time, the intercept increases and the slope decreases, during the initial stress stage and saturates after long stress time. The intercept and slope of the SILC plot and ln(J_SILC) all not only can be fitted by two exponential decay functions, but also the time constant, τ₁ and τ₂, of the fitted parameters are the same value. So we think there two types of trap play very important role in SILC of ultrathin oxide.