DocumentCode :
2218106
Title :
Nanoanalysis of lanthanum scandate MOS capacitors addressing reliability after local current flow
Author :
Hippler, Markus ; Streit, Stephan ; Lehmann, Jan ; Skorupa, Wolfgang ; Helm, Manfred ; Schmidt, Heidemarie ; Lopes, J. Marcelo Jardao ; Schubert, Jürgen ; Mantl, Siegfried ; Huber, Hans-Peter ; Kienberger, Ferry
Author_Institution :
HZDR, Inst. fur Ionenstrahlphysik und Materialforschung, Dresden, Germany
fYear :
2011
fDate :
27-28 Sept. 2011
Firstpage :
1
Lastpage :
3
Abstract :
The capacitance of series LaScO3-SiO2 capacitors on Si substrates has been investigated in the same DC bias range and at the same operation frequencies by admittance and scanning microwave microscopy (SMM) measurements on the 10-3 cm2 scale and 102 nm2 scale, respectively. By SMM measurements it is shown that changes in the series capacitance due to local current flows persist and that such nanoscale changes can be induced by slow speed SMM scans at a constant DC bias.
Keywords :
MOS capacitors; lanthanum compounds; nanotechnology; reliability; scandium compounds; silicon; LaScO3-SiO2; lanthanum scandate MOS capacitors; local current flows; nanoanalysis; reliability; scanning microwave microscopy; series capacitance; Capacitance; Capacitance measurement; Films; Frequency dependence; Frequency measurement; Microwave measurements; Silicon;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Conference Dresden (SCD), 2011
Conference_Location :
Dresden
Print_ISBN :
978-1-4577-0431-4
Type :
conf
DOI :
10.1109/SCD.2011.6068712
Filename :
6068712
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2218106
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