Title :
Degradation model of the electron gate current in PMOSFET
Author :
Tang, Yusheng ; Hao, Yue ; Zhu, Jiangang ; Zhang, Jincheng
Author_Institution :
Microelectron. Technique Center, Shanghai Jiao Tong Univ., China
Abstract :
In this paper, we present an accurate degradation model of the electron gate current in PMOSFETs. The analytical and physics-based model was developed considering trapped-electron effect on the gate current during the stress. This model can be used to extract exactly the trapped electron density in the gate oxide of PMOSFET and to model the hot-carrier lifetime of the devices.
Keywords :
MOSFET; carrier lifetime; electron density; electron traps; hot carriers; semiconductor device models; PMOSFET; degradation model; electron gate current; gate oxide; hot-carrier lifetime; physics-based model; trapped electron density; trapped-electron effect; Current density; Degradation; Electron traps; Electronic mail; MOSFET circuits; Microelectronics; Packaging; Partial response channels; Stress measurement; Voltage;
Conference_Titel :
Solid-State and Integrated-Circuit Technology, 2001. Proceedings. 6th International Conference on
Print_ISBN :
0-7803-6520-8
DOI :
10.1109/ICSICT.2001.982068
