A better hot-carrier-induced degradation monitor for several typical device parameters of pMOSFET´s

Author

Jin-Cheng, Zhang ; Yue, Hao ; Zhi-wei, Zhu

Author_Institution

Inst. of Microelectron., Xidian Univ., China

Volume

2

fYear

2001

fDate

22-25 Oct. 2001

Firstpage

1017

Abstract

According to a variety of experimental studies, a better hot-carrier-induced degradation monitor for pMOSFET´s is proposed in this paper. Utilizing the new degradation monitor, a new unified model for degradation simulation and lifetime prediction of pMOSFET´s is built. Comparison between simulation and measured results shows that the new degradation model has a higher accuracy and a wider application range.

Keywords

MOSFET; hot carriers; semiconductor device models; semiconductor device reliability; semiconductor device testing; degradation simulation; device parameter degradation; hot-carrier-induced degradation monitor; lifetime prediction; linear drain current degradation; pMOSFET; poly-silicon gate CMOS process; saturation drain current degradation; threshold voltage degradation; transconductance degradation; unified model; Condition monitoring; Current measurement; Degradation; Gold; Hot carriers; MOSFET circuits; Predictive models; Stress measurement; Threshold voltage; Transconductance;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated-Circuit Technology, 2001. Proceedings. 6th International Conference on

Print_ISBN

0-7803-6520-8

Type

conf

DOI

10.1109/ICSICT.2001.982069

Filename

982069