Title :
SCR memory cell modeling and characterization
Author :
Bechdolt, Bob ; Grubisich, Michael ; Foerstner, Juergen
Author_Institution :
Digital Equipment Corp., Cupertino, CA, USA
Abstract :
Modeling and characterization of DC and AC properties of the SCR memory cell are described. Methods of modeling charge storage in saturated devices using primarily active devices are discussed. The methods allow individual component evaluation, so that performance-limiting parameters, device sensitivity, and the effects of scaling can be determined. The models are shown to be in good agreement with measured results on memory cells. Data on a 4 K self-timed RAM, which is fabricated on the MOSAIC 3 process, are presented and shown to be in good agreement with SPICE performance projections
Keywords :
bipolar integrated circuits; integrated memory circuits; random-access storage; semiconductor device models; thyristors; 4 kbit; AC properties; DC properties; MOSAIC 3 process; SCR memory cell; SPICE performance projections; characterization; device sensitivity; effects of scaling; modeling; modeling charge storage; performance-limiting parameters; saturated devices; self-timed RAM; Circuits; Equations; Implants; Radiative recombination; Random access memory; Read-write memory; SPICE; Spontaneous emission; Substrates; Thyristors;
Conference_Titel :
Bipolar Circuits and Technology Meeting, 1989., Proceedings of the 1989
Conference_Location :
Minneapolis, MN
DOI :
10.1109/BIPOL.1989.69493
