DocumentCode
2218176
Title
Effects of bandgap narrowing on the capacitance of silicon and GaAs pn junctions
Author
Jain, S.C. ; Mertens, R.P. ; Van Mieghem, P. ; Mauk, M.G. ; Ghannam, M. ; Borghs, G. ; Van Overstraeten, R.
Author_Institution
Interuniv. Microelectron. Center, Leuven, Belgium
fYear
1988
fDate
12-13 Sep 1988
Firstpage
195
Lastpage
198
Abstract
The effect of heavy doping on the capacitance-voltage relation of abrupt and linearly-graded p-n junctions is studied by computer simulations. An estimate of bandgap narrowing in compensated silicon is given for linearly-graded junctions. Capacitance-voltage curves of abrupt p-n GaAs junctions grown by MBE are investigated and compared to the theoretical curves
Keywords
III-V semiconductors; capacitance; digital simulation; elemental semiconductors; energy gap; gallium arsenide; heavily doped semiconductors; p-n homojunctions; silicon; GaAs; MBE; Si; abrupt junction; bandgap narrowing; capacitance; capacitance-voltage relation; computer simulations; heavy doping; linearly-graded junctions; p-n junctions; Capacitance; Capacitance-voltage characteristics; Doping; Gallium arsenide; P-n junctions; Photonic band gap; Silicon; Statistics; Tail; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Bipolar Circuits and Technology Meeting, 1988., Proceedings of the 1988
Conference_Location
Minneapolis, MN
Type
conf
DOI
10.1109/BIPOL.1988.51077
Filename
51077
Link To Document