A flexible InGaZnO based 1-bit SRAM under mechanical strain

Amorphous Indium-Gallium-Zinc-Oxide (a-IGZO) is a promising material for the use in thin-film transistors (TFTs) and more complex electronic devices fabricated on flexible plastic substrates due to the low required deposition temperatures, and the high achievable electron mobilities. Here we show a mechanically flexible, fully integrated 1-bit SRAM composed of 6 a-IGZO TFTs fabricated on flexible polyimide foil that is operated with a supply voltage of 5 V, and for the first time electrically tested while bent to tensile radii of 10 mm and 5 mm. We observed circuit operation up to an input frequency of 10 kHz. The output signal of our 1-bit SRAM stays virtually unchanged even when the circuit is exposed to tensile mechanical strain of 0.52%, induced by bending it to a radius of 5 mm.