• DocumentCode
    2218461
  • Title

    Modeling for wireless PA development

  • Author

    Maas, Stephen

  • Author_Institution
    AWR Corp., El Segundo, CA, USA
  • fYear
    2011
  • fDate
    27-28 Sept. 2011
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    In the design of wireless and handset power amplifiers, modeling of both RF and thermal effects is extremely important. Furthermore, because of the high sensitivity to parasitics, even the modeling of chip devices in the output matching circuit is critical. This paper addresses approaches to such modeling. Finally, because of the limitations of device models and analytical techniques, we show that cosimulation with behavioral models is a practical and efficient way to evaluate power amplifier designs.
  • Keywords
    design; power amplifiers; RF effects; handset power amplifiers; thermal effects; wireless PA development; Computational modeling; Electronic ballasts; Heterojunction bipolar transistors; Integrated circuit modeling; Power amplifiers; Thermal stability; Wireless communication; Modeling; power amplifier; wireless;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Conference Dresden (SCD), 2011
  • Conference_Location
    Dresden
  • Print_ISBN
    978-1-4577-0431-4
  • Type

    conf

  • DOI
    10.1109/SCD.2011.6068722
  • Filename
    6068722