DocumentCode
2218461
Title
Modeling for wireless PA development
Author
Maas, Stephen
Author_Institution
AWR Corp., El Segundo, CA, USA
fYear
2011
fDate
27-28 Sept. 2011
Firstpage
1
Lastpage
4
Abstract
In the design of wireless and handset power amplifiers, modeling of both RF and thermal effects is extremely important. Furthermore, because of the high sensitivity to parasitics, even the modeling of chip devices in the output matching circuit is critical. This paper addresses approaches to such modeling. Finally, because of the limitations of device models and analytical techniques, we show that cosimulation with behavioral models is a practical and efficient way to evaluate power amplifier designs.
Keywords
design; power amplifiers; RF effects; handset power amplifiers; thermal effects; wireless PA development; Computational modeling; Electronic ballasts; Heterojunction bipolar transistors; Integrated circuit modeling; Power amplifiers; Thermal stability; Wireless communication; Modeling; power amplifier; wireless;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Conference Dresden (SCD), 2011
Conference_Location
Dresden
Print_ISBN
978-1-4577-0431-4
Type
conf
DOI
10.1109/SCD.2011.6068722
Filename
6068722
Link To Document