DocumentCode :
2218461
Title :
Modeling for wireless PA development
Author :
Maas, Stephen
Author_Institution :
AWR Corp., El Segundo, CA, USA
fYear :
2011
fDate :
27-28 Sept. 2011
Firstpage :
1
Lastpage :
4
Abstract :
In the design of wireless and handset power amplifiers, modeling of both RF and thermal effects is extremely important. Furthermore, because of the high sensitivity to parasitics, even the modeling of chip devices in the output matching circuit is critical. This paper addresses approaches to such modeling. Finally, because of the limitations of device models and analytical techniques, we show that cosimulation with behavioral models is a practical and efficient way to evaluate power amplifier designs.
Keywords :
design; power amplifiers; RF effects; handset power amplifiers; thermal effects; wireless PA development; Computational modeling; Electronic ballasts; Heterojunction bipolar transistors; Integrated circuit modeling; Power amplifiers; Thermal stability; Wireless communication; Modeling; power amplifier; wireless;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Conference Dresden (SCD), 2011
Conference_Location :
Dresden
Print_ISBN :
978-1-4577-0431-4
Type :
conf
DOI :
10.1109/SCD.2011.6068722
Filename :
6068722
Link To Document :
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