• DocumentCode
    2218523
  • Title

    The composition study of silicon oxynitride prepared by PECVD

  • Author

    Dan, Yaping ; Yue, Ruifeng ; Wang, Yan ; Yao, Yongzhao ; Xu, Yang ; Liu, Litian

  • Author_Institution
    Inst. of Microelectron., Tsinghua Univ., Beijing, China
  • Volume
    2
  • fYear
    2001
  • fDate
    22-25 Oct. 2001
  • Firstpage
    1084
  • Abstract
    A full range SiOxNy from SiO2 to Si3N4 is prepared by decomposing mixture of SiH4, NH3 and N2O in commercial RF PECVD reactors. All samples are annealed in N2 atmosphere for 30 min at 600°C, 750°C, 900°C and analyzed by IR spectroscopy. It is shown that the main peak assigned to Si-(O, N) stretching mode downshifts when approaching to near stoichiometric Si3N4 and the segregation into Si3N4 and SiO2 and Si(OxNyHz) tetrahedra from SiOxNy occurs after 750°C annealing.
  • Keywords
    annealing; infrared spectra; insulating thin films; plasma CVD coatings; segregation; silicon compounds; 600 degC; 750 degC; 900 degC; IR spectroscopy; RF PECVD; SiON; annealing; chemical composition; segregation; silicon oxynitride film; stretching mode; Annealing; Atmosphere; Chemical technology; Inductors; Infrared spectra; Radio frequency; Silicon; Spectroscopy; Temperature; Wafer bonding;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State and Integrated-Circuit Technology, 2001. Proceedings. 6th International Conference on
  • Print_ISBN
    0-7803-6520-8
  • Type

    conf

  • DOI
    10.1109/ICSICT.2001.982086
  • Filename
    982086
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2218523