DocumentCode :
2218523
Title :
The composition study of silicon oxynitride prepared by PECVD
Author :
Dan, Yaping ; Yue, Ruifeng ; Wang, Yan ; Yao, Yongzhao ; Xu, Yang ; Liu, Litian
Author_Institution :
Inst. of Microelectron., Tsinghua Univ., Beijing, China
Volume :
2
fYear :
2001
fDate :
22-25 Oct. 2001
Firstpage :
1084
Abstract :
A full range SiOxNy from SiO2 to Si3N4 is prepared by decomposing mixture of SiH4, NH3 and N2O in commercial RF PECVD reactors. All samples are annealed in N2 atmosphere for 30 min at 600°C, 750°C, 900°C and analyzed by IR spectroscopy. It is shown that the main peak assigned to Si-(O, N) stretching mode downshifts when approaching to near stoichiometric Si3N4 and the segregation into Si3N4 and SiO2 and Si(OxNyHz) tetrahedra from SiOxNy occurs after 750°C annealing.
Keywords :
annealing; infrared spectra; insulating thin films; plasma CVD coatings; segregation; silicon compounds; 600 degC; 750 degC; 900 degC; IR spectroscopy; RF PECVD; SiON; annealing; chemical composition; segregation; silicon oxynitride film; stretching mode; Annealing; Atmosphere; Chemical technology; Inductors; Infrared spectra; Radio frequency; Silicon; Spectroscopy; Temperature; Wafer bonding;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State and Integrated-Circuit Technology, 2001. Proceedings. 6th International Conference on
Print_ISBN :
0-7803-6520-8
Type :
conf
DOI :
10.1109/ICSICT.2001.982086
Filename :
982086
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2218523
بازگشت