DocumentCode
2218526
Title
Wideband cryogenic on-wafer measurements at 20 -- 295 K and 50-110 GHz
Author
Vähä-Heikkilä, Tauno ; Varis, Jussi ; Hakojarvi, Hannu ; Tuovinen, Jussi
Author_Institution
MilliLab, VTT Information Technology, P.O. BOX 12021, 02044 VTT, Finland, tel. 358 9 4567219, fax. +358 9 453 7013, tauno. vaha-heikkila@vtt.fi
fYear
2003
fDate
4-6 Oct. 2003
Firstpage
1167
Lastpage
1170
Abstract
A measurement system has been developed for cryogenic on-wafer characterization at 50-110 GHz. The measurement system allows onwafer S-parameter measurements of active and passive devices at this frequency range. The S-parameters of active devices can be measured as function of frequency, temperature, and bias conditions. As an example of cryogenic on-wafer measurements, measured S-parameters of InP HEMTs are presented at temperatures of 20, 80, 160, and 295 K and in the frequency range of 50 -110 GHz.
Keywords
Cryogenics; Frequency measurement; HEMTs; Indium phosphide; MODFETs; Millimeter wave measurements; Scattering parameters; Steel; Temperature; Wideband;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 2003 33rd European
Conference_Location
Munich, Germany
Print_ISBN
1-58053-834-7
Type
conf
DOI
10.1109/EUMA.2003.341147
Filename
4143230
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