DocumentCode
2218554
Title
Investigation on properties of Focused Ion Beam Enhanced Etching
Author
Suhua, Jiang ; Jingfeng, Ni ; Jiaji, Wang
Author_Institution
Nat. Microanalysis Center, Fudan Univ., Shanghai, China
Volume
2
fYear
2001
fDate
22-25 Oct. 2001
Firstpage
1091
Abstract
Focused Ion Beam (FIB), an advanced technology combining microanalysis with microprocessing, plays an important role in modern IC design and manufacturing. Enhanced Etching (EE) is one of the main functions of FIB. In this paper, the fundamental properties such as etching rate and crater topography on different materials or under different ion currents are studied. The results are also compared with the data and micrographs of physical sputtering etching in the same condition. The difference is fully discussed. It is meaningful to practical work and research.
Keywords
focused ion beam technology; sputter etching; IC manufacturing; crater topography; focused ion beam enhanced etching; sputter etching; Electrons; Fabrication; Failure analysis; Focusing; Ion beams; Manufacturing processes; Metal-insulator structures; Sputter etching; Sputtering; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State and Integrated-Circuit Technology, 2001. Proceedings. 6th International Conference on
Print_ISBN
0-7803-6520-8
Type
conf
DOI
10.1109/ICSICT.2001.982088
Filename
982088
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