Title :
Electron recombination at the silicided base contact of an advanced self-aligned poly-silicon emitter
Author :
de Jong, J.L. ; Lane, R.H. ; de Groot, J.G. ; Conner, G.W.
Author_Institution :
Signetics, Sunnyvale, CA, USA
Abstract :
An advanced self-aligned high-speed bipolar transistor (HS4) with a polysilicon emitter is presented. The silicided external base region is separated from the polysilicon emitter by an oxide sidewall spacer. The effect of the spacer width and the dopant concentration underneath this spacer on the electron recombination current at the base contact is described
Keywords :
bipolar transistors; electron-hole recombination; elemental semiconductors; silicon; HS4; Si-SiO2-TiSi2; advanced self-aligned high-speed bipolar transistor; dopant concentration; electron recombination current; oxide sidewall spacer; polysilicon emitter; silicided base contact; spacer width; Bipolar transistors; Boron; Breakdown voltage; Capacitance; Electron emission; Epitaxial layers; Etching; Implants; Silicon; Spontaneous emission;
Conference_Titel :
Bipolar Circuits and Technology Meeting, 1988., Proceedings of the 1988
Conference_Location :
Minneapolis, MN
DOI :
10.1109/BIPOL.1988.51079
