• DocumentCode
    2218706
  • Title

    Electron recombination at the silicided base contact of an advanced self-aligned poly-silicon emitter

  • Author

    de Jong, J.L. ; Lane, R.H. ; de Groot, J.G. ; Conner, G.W.

  • Author_Institution
    Signetics, Sunnyvale, CA, USA
  • fYear
    1988
  • fDate
    12-13 Sep 1988
  • Firstpage
    202
  • Lastpage
    205
  • Abstract
    An advanced self-aligned high-speed bipolar transistor (HS4) with a polysilicon emitter is presented. The silicided external base region is separated from the polysilicon emitter by an oxide sidewall spacer. The effect of the spacer width and the dopant concentration underneath this spacer on the electron recombination current at the base contact is described
  • Keywords
    bipolar transistors; electron-hole recombination; elemental semiconductors; silicon; HS4; Si-SiO2-TiSi2; advanced self-aligned high-speed bipolar transistor; dopant concentration; electron recombination current; oxide sidewall spacer; polysilicon emitter; silicided base contact; spacer width; Bipolar transistors; Boron; Breakdown voltage; Capacitance; Electron emission; Epitaxial layers; Etching; Implants; Silicon; Spontaneous emission;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Bipolar Circuits and Technology Meeting, 1988., Proceedings of the 1988
  • Conference_Location
    Minneapolis, MN
  • Type

    conf

  • DOI
    10.1109/BIPOL.1988.51079
  • Filename
    51079
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2218706