Title :
Design optimisation of power MOSFET for high frequency synchronous rectification
Author :
Liang, Y.C. ; Oruganti, R. ; Oh, T.B.
Author_Institution :
Dept. of Electr. Eng., Nat. Univ. of Singapore, Singapore
Abstract :
Synchronous rectifiers used in high frequency, low output voltage applications are power MOSFETs specially designed to replace the usual output Schottky diodes in order to reduce power converter losses. This paper deals with the analysis and design optimisation of a synchronous rectifier suitable for applications of 1 to 10 MHz switching power supplies. Three different MOSFET structures were studied and evaluated through detailed 2-dimensional device simulations. The process parameters are optimised against three major performance parameters, namely: (1) the recovery time of the body diode; (2) the product of on-state resistance and input capacitance; and (3) the breakdown voltage of the body diode. Based on the evaluation, the UMOS structure was selected for further work. The final design optimisation of the UMOS was then carried out and an optimised device is presented as the final design
Keywords :
insulated gate field effect transistors; network synthesis; optimisation; power convertors; power transistors; rectifiers; rectifying circuits; semiconductor device models; switched mode power supplies; 1 to 10 MHz; 2-dimensional device simulations; HF synchronous rectifier; UMOS structure; applications; breakdown voltage; design optimisation; input capacitance; losses; on-state resistance; power MOSFETs; power converter; process parameters; recovery time; switching power supplies; Capacitance; Design optimization; Frequency conversion; Immune system; Low voltage; MOSFET circuits; Power MOSFET; Power supplies; Rectifiers; Schottky diodes;
Conference_Titel :
Industrial Electronics, Control, and Instrumentation, 1993. Proceedings of the IECON '93., International Conference on
Conference_Location :
Maui, HI
Print_ISBN :
0-7803-0891-3
DOI :
10.1109/IECON.1993.338984
