Local stress measurement on metal lines and dielectrics of BEoL pattern by stress relief technique

Author

Vogel, Dietmar ; Rzepka, Sven ; Michel, Bernd ; Gollhardt, Astrid

Author_Institution

Micro Mater. Center Chemnitz, Fraunhofer ENAS, Chemnitz, Germany

fYear

2011

fDate

27-28 Sept. 2011

Firstpage

1

Lastpage

3

Abstract

The paper presents a new measurement method for residual stresses introduced by manufacturing in BEoL structures. Material removal by FIB ion milling is used to release elastically frozen stresses. Normal stress components are calculated from local stress relaxation nearby milled trenches. A validation of the new technique is accomplished by additional bow measurements on defined layers on substrate. Spatially resolved determination of stress values in metal lines and the dielectrics in between demonstrates the capability of the tool for future applications.

Keywords

focused ion beam technology; internal stresses; semiconductor device manufacture; semiconductor industry; stress analysis; BEoL pattern; BEoL structures; FIB ion milling; dielectrics; local stress measurement; local stress relaxation; material removal; metal lines; residual stress; stress relief technique; Copper; Films; Silicon; Stress; Stress measurement; BEoL; dielectrics; low-K; semiconductor; stress;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Conference Dresden (SCD), 2011

Conference_Location

Dresden

Print_ISBN

978-1-4577-0431-4

Type

conf

DOI

10.1109/SCD.2011.6068737

Filename

6068737