Title :
Operation of poly emitter bipolar npn and p-channel JFETs near liquid helium (10 K) temperature
Author :
Kapoor, Ashok K. ; Hingarh, H.K. ; Jayadev, T.S.
Author_Institution :
Nat. Semicond. Corp., Santa Clara, CA, USA
Abstract :
Operation of poly bipolar npn and p-channel JFET transistors is described up to 10 K. Current gain of the npn transistor equal to 3 is measured at 9 K. Transconductance of the p-channel JFET remains constant for 60 K>T>10 K. Certain new phenomena are observed in both the devices below 60 K which are attributed to carrier freezeout and high-level injection. These experimental results also tend to suggest that the useful range of operation of these devices can be extended to below liquid nitrogen temperature
Keywords :
bipolar transistors; cryogenics; elemental semiconductors; junction gate field effect transistors; silicon; 10 to 60 K; Si; carrier freezeout; current gain; high-level injection; polysilicon bipolar n-p-n transistor; polysilicon p-channel JFET; range of operation; transconductance; Current measurement; Electrical resistance measurement; Gain measurement; Helium; JFETs; Nitrogen; Silicon; Temperature dependence; Temperature distribution; Voltage;
Conference_Titel :
Bipolar Circuits and Technology Meeting, 1988., Proceedings of the 1988
Conference_Location :
Minneapolis, MN
DOI :
10.1109/BIPOL.1988.51081
