Title :
Switching characteristics of poly bipolar circuits at liquid nitrogen temperature
Author :
Chen, H.J. ; Nawaz, S.Z. ; Urke, B.D. ; Vyas, H.P.
Author_Institution :
Honeywell Inc., Plymouth, MN, USA
Abstract :
Measured data are presented on performance of current mode logic (CML) ring oscillators at liquid nitrogen temperature. The devices and circuits were fabricated using double-poly bipolar technology. The experimental data are explained using the hybrid-π model. CML ring oscillators were fabricated using 1.0 μm design rules. The measured delay at LN2 increased by a factor of 2.3 compared to that at room temperature. The increase in delay is explained by the temperature behavior of the base and load resistors
Keywords :
bipolar integrated circuits; elemental semiconductors; emitter-coupled logic; integrated circuit technology; silicon; 1 micron; 77 K; CML ring oscillators; Si; delay; design rules; double-poly bipolar technology; hybrid-π model; polysilicon bipolar circuits; switching characteristics; Bipolar transistors; Capacitance; Doping; Etching; Implants; Isolation technology; Nitrogen; Photonic band gap; Switching circuits; Temperature;
Conference_Titel :
Bipolar Circuits and Technology Meeting, 1988., Proceedings of the 1988
Conference_Location :
Minneapolis, MN
DOI :
10.1109/BIPOL.1988.51082
