• DocumentCode
    2218929
  • Title

    Switching characteristics of poly bipolar circuits at liquid nitrogen temperature

  • Author

    Chen, H.J. ; Nawaz, S.Z. ; Urke, B.D. ; Vyas, H.P.

  • Author_Institution
    Honeywell Inc., Plymouth, MN, USA
  • fYear
    1988
  • fDate
    12-13 Sep 1988
  • Firstpage
    215
  • Lastpage
    218
  • Abstract
    Measured data are presented on performance of current mode logic (CML) ring oscillators at liquid nitrogen temperature. The devices and circuits were fabricated using double-poly bipolar technology. The experimental data are explained using the hybrid-π model. CML ring oscillators were fabricated using 1.0 μm design rules. The measured delay at LN2 increased by a factor of 2.3 compared to that at room temperature. The increase in delay is explained by the temperature behavior of the base and load resistors
  • Keywords
    bipolar integrated circuits; elemental semiconductors; emitter-coupled logic; integrated circuit technology; silicon; 1 micron; 77 K; CML ring oscillators; Si; delay; design rules; double-poly bipolar technology; hybrid-π model; polysilicon bipolar circuits; switching characteristics; Bipolar transistors; Capacitance; Doping; Etching; Implants; Isolation technology; Nitrogen; Photonic band gap; Switching circuits; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Bipolar Circuits and Technology Meeting, 1988., Proceedings of the 1988
  • Conference_Location
    Minneapolis, MN
  • Type

    conf

  • DOI
    10.1109/BIPOL.1988.51082
  • Filename
    51082
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2218929