Computational study of carrier injection in III-nitride core-shell nanowire-LEDs

Author

Deppner, Marcus ; Römer, Friedhard ; Witzigmann, Bernd ; Ledig, Johannes ; Neumann, Richard ; Waag, Andreas ; Bergbauer, Werner ; Strassburg, Martin

Author_Institution

Comput. Electron. & Photonics Group, Univ. of Kassel, Kassel, Germany

fYear

2011

fDate

27-28 Sept. 2011

Firstpage

1

Lastpage

4

Abstract

We report on the computational analysis of a core-shell GaN/InGaN nanowire LED with a capped pyramidal top. The active region consists of a polar multi quantum well (MQW) at the top, a non-polar MQW along the lateral face and a semi-polar one joining them. Differences in the opto-electronic characteristics of the three crystal orientations can be examined, arising from polarization effects as well as the strain-induced bandedge shift. Furthermore the influence of carrier injection efficiency in a nanowire is investigated.

Keywords

light emitting diodes; nanowires; quantum wells; GaN-InGaN; III-nitride core-shell nanowire-LED; capped pyramidal top; carrier injection; computational analysis; core-shell GaN/InGaN nanowire LED; opto-electronic characteristics; polar multiquantum well; strain-induced bandedge shift; Computational modeling; Crystals; Gallium nitride; Light emitting diodes; Luminescence; Quantum well devices; Strain;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Conference Dresden (SCD), 2011

Conference_Location

Dresden

Print_ISBN

978-1-4577-0431-4

Type

conf

DOI

10.1109/SCD.2011.6068745

Filename

6068745