Ti Schottky barrier diodes on n-type 6H-SiC

Author

Liu, Zhongli ; Wang, Shurui ; Yu, Fang ; Zhang, Yonggang ; Zhao, Hui

Author_Institution

Inst. of Semicond., Acad. Sinica, Beijing, China

Volume

2

fYear

2001

fDate

22-25 Oct. 2001

Firstpage

1183

Abstract

Using thermal evaporation, Ti/6H-SiC Schottky barrier diodes (SBD) were fabricated. They showed good rectification characteristics from room temperature to 200°C. At low current density, the current conduction mechanism follows the thermionic emission theory. These diodes demonstrated a low reverse leakage current of below 1 × 10^-4Acm^-2. Using neon implantation to form the edge termination. the breakdown voltage was improved to be 800 V. In addition, these SBDs showed superior switching characteristics.

Keywords

Schottky diodes; current density; ion implantation; leakage currents; neon; semiconductor device breakdown; semiconductor switches; semiconductor-metal boundaries; silicon compounds; solid-state rectifiers; thermionic emission; titanium; wide band gap semiconductors; 20 to 200 C; 800 V; Ne implantation; SBDs; Ti-SiC:Ne; Ti/6H-SiC Schottky barrier diodes; breakdown voltage; current conduction mechanism; edge termination; n-type 6H-SiC; rectification characteristics; reverse leakage current; switching characteristics; thermal evaporation; thermionic emission theory; Capacitance-voltage characteristics; Gallium arsenide; P-i-n diodes; Schottky barriers; Schottky diodes; Semiconductor diodes; Silicon carbide; Temperature; Thermal conductivity; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated-Circuit Technology, 2001. Proceedings. 6th International Conference on

Print_ISBN

0-7803-6520-8

Type

conf

DOI

10.1109/ICSICT.2001.982110

Filename

982110