• DocumentCode
    2219466
  • Title

    A novel built-in current sensor for IDDQ testing of deep submicron CMOS ICs

  • Author

    Athan, Stephan P. ; Landis, David L. ; Al-Arian, Sami A.

  • Author_Institution
    Center for Microelectron. Res., Univ. of South Florida, Tampa, FL, USA
  • fYear
    1996
  • fDate
    28 Apr-1 May 1996
  • Firstpage
    118
  • Lastpage
    123
  • Abstract
    Today´s built-in current sensor (BICS) techniques provide IDDQ current sensitivity which is adequate for testing and diagnosing near-micron CMOS ICs. However, faulty and fault-free IDDQ can become indiscernible at deep submicron levels. This paper describes a novel BICS methodology which improves fault detectability and diagnosability in ULSI CMOS ICs
  • Keywords
    CMOS integrated circuits; ULSI; electric current measurement; electric sensing devices; fault diagnosis; integrated circuit testing; leakage currents; IDDQ testing; ULSI CMOS; built-in current sensor; deep submicron CMOS ICs; fault detectability; fault diagnosability; CMOS logic circuits; CMOS technology; Circuit faults; Circuit testing; Design engineering; Electrical fault detection; Fault detection; Large-scale systems; Microelectronics; Ultra large scale integration;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Test Symposium, 1996., Proceedings of 14th
  • Conference_Location
    Princeton, NJ
  • ISSN
    1093-0167
  • Print_ISBN
    0-8186-7304-4
  • Type

    conf

  • DOI
    10.1109/VTEST.1996.510845
  • Filename
    510845
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2219466