Title :
A novel built-in current sensor for IDDQ testing of deep submicron CMOS ICs
Author :
Athan, Stephan P. ; Landis, David L. ; Al-Arian, Sami A.
Author_Institution :
Center for Microelectron. Res., Univ. of South Florida, Tampa, FL, USA
fDate :
28 Apr-1 May 1996
Abstract :
Today´s built-in current sensor (BICS) techniques provide IDDQ current sensitivity which is adequate for testing and diagnosing near-micron CMOS ICs. However, faulty and fault-free IDDQ can become indiscernible at deep submicron levels. This paper describes a novel BICS methodology which improves fault detectability and diagnosability in ULSI CMOS ICs
Keywords :
CMOS integrated circuits; ULSI; electric current measurement; electric sensing devices; fault diagnosis; integrated circuit testing; leakage currents; IDDQ testing; ULSI CMOS; built-in current sensor; deep submicron CMOS ICs; fault detectability; fault diagnosability; CMOS logic circuits; CMOS technology; Circuit faults; Circuit testing; Design engineering; Electrical fault detection; Fault detection; Large-scale systems; Microelectronics; Ultra large scale integration;
Conference_Titel :
VLSI Test Symposium, 1996., Proceedings of 14th
Conference_Location :
Princeton, NJ
Print_ISBN :
0-8186-7304-4
DOI :
10.1109/VTEST.1996.510845
