Title :
The study of novel high brightness 620 nm AlGaInP light emitting diodes
Author :
Guo, Xia ; Wang, Guo-Hong ; Zhu, Wen-Jun ; Du, Jin-Yu ; Gao, Guo ; Zou, De-Shu ; Shen, Guang-Di ; Ma, Xiao-Yu ; Chen, Liang-Hui
Author_Institution :
Dept of Electron. Eng., Beijing Polytech. Univ., China
Abstract :
The problem of conventional light emitting diodes (LEDs) was analyzed. A novel tunnel-regenerated multiple-active-region light-emitting diode with high quantum efficiency and high brightness has been proposed and fabricated. We have proved theoretically that the efficiency of the electrical luminescence and the on-axis luminous intensity of such novel LEDs scaled linearly approximately with the number of the active regions. The on-axis luminous intensity of such novel LED with only 3 μm GaP current spreading layer has exceeded 5cd at 20 mA DC operation under 15° package. The ultrahigh quantum efficiency and ultrahigh brightness LED under the low injection level was realized.
Keywords :
III-V semiconductors; aluminium compounds; brightness; electroluminescence; gallium compounds; indium compounds; light emitting diodes; spectral line intensity; 20 mA; 620 nm; AlGaInP; DC operation; GaP; GaP current spreading layer; brightness; electrical luminescence efficiency; light emitting diodes; on-axis luminous intensity; quantum efficiency; tunnel-regenerated multiple-active-region LED; Brightness; Charge carrier processes; Laboratories; Leakage current; Light emitting diodes; Linear approximation; Luminescence; Packaging; Radiative recombination; Spontaneous emission;
Conference_Titel :
Solid-State and Integrated-Circuit Technology, 2001. Proceedings. 6th International Conference on
Print_ISBN :
0-7803-6520-8
DOI :
10.1109/ICSICT.2001.982127
