Cascaded coupled large optical cavity semiconductor lasers

Author

Bifeng, Cui ; Peng, Lian ; Tao, Yin ; Changhua, Chen ; JianJun, Li ; Guo, Gao ; Deshu, Zhou ; GuangDi, Shen ; Xiaoyu, Ma ; Lianghui, Chen

Author_Institution

Dept of Electron. Eng., Beijing Polytech. Univ., China

Volume

2

fYear

2001

fDate

22-25 Oct. 2001

Firstpage

1255

Abstract

Novel multi-active region semiconductor lasers with large coupled optical cavity and high quantum efficiency has been proposed and fabricated. The external and differential quantum efficiency are 2.9 and 3.0 W/A, and the output light power is ∼5W when the injecting current equals 2A for the four active region 980 nm strained InGaAs/GaAs QW lasers. The fundamental mode light output with perpendicular angle ≤17° for this type of large coupled optical cavity laser has been achieved.

Keywords

III-V semiconductors; gallium arsenide; indium compounds; microcavity lasers; quantum cascade lasers; semiconductor quantum wells; 5 W; 980 nm; InGaAs-GaAs; InGaAs/GaAs; cascaded coupled large optical cavity semiconductor lasers; differential quantum efficiency; external quantum efficiency; fundamental mode light output; injecting current; large coupled optical cavity; multi-active region semiconductor lasers; output light power; strained QW; Gallium arsenide; Laser theory; Optical coupling; Optical refraction; Optical variables control; Optical waveguides; Power lasers; Quantum cascade lasers; Semiconductor lasers; Waveguide junctions;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated-Circuit Technology, 2001. Proceedings. 6th International Conference on

Print_ISBN

0-7803-6520-8

Type

conf

DOI

10.1109/ICSICT.2001.982128

Filename

982128