AlGaN/GaN/AlGaN ultraviolet photodetectors on Si

Author

Jiang, R.L. ; Zhao, Z.M. ; Chen, P. ; Xi, D.J. ; Shen, B. ; Zhang, R. ; Zheng, Y.D.

Author_Institution

Dept. of Phys., Nanjing Univ., China

Volume

2

fYear

2001

fDate

22-25 Oct. 2001

Firstpage

1286

Abstract

AlGaN/GaN/AlGaN ultraviolet photodetectors were grown on Si [111] substrates using an AlN buffer by metalorganic chemical vapor deposition. These detectors showed a high response in a narrow range of wavelength with a peak position at 365 nm. A peak responsivity of 24 A/W was obtained at 5.5 V bias. This high responsivity is mainly due to the high polarization electric-field in GaN layer of AlGaN/GaN/AlGaN heterojunction structure and the potential wells at AlGaN/GaN interfaces.

Keywords

III-V semiconductors; aluminium compounds; band structure; gallium compounds; photodetectors; semiconductor device measurement; ultraviolet detectors; wide band gap semiconductors; 365 nm; 5.5 V; AlGaN-GaN-AlGaN; AlGaN/GaN/AlGaN ultraviolet photodetectors; AlN buffer; Si; Si[111] substrates; high polarization electric-field; interface potential wells; metalorganic chemical vapor deposition; responsivity; Aluminum gallium nitride; Chemical vapor deposition; Detectors; Epitaxial layers; Gallium nitride; Heterojunctions; Photodetectors; Silicon carbide; Substrates; Thermal resistance;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated-Circuit Technology, 2001. Proceedings. 6th International Conference on

Print_ISBN

0-7803-6520-8

Type

conf

DOI

10.1109/ICSICT.2001.982135

Filename

982135