GaInAsSb/GaSb long wavelength mid-IR detectors

Author

Wu, Binhe ; Xia, Guanqun ; Cheng, Zongquan ; Liang, Bangli ; Li, Zhihuai

Author_Institution

Shanghai Inst. of Metall., China

Volume

2

fYear

2001

fDate

22-25 Oct. 2001

Firstpage

1289

Abstract

As one of the important materials systems in the application of mid-IR, GaInAsSb has shown its promising usage in the range of 2-5 μm. In this paper, we will present the method and experiment of adding AlGaAsSb window layer to suppress the dark current of the GaInAsSb/GaSb photodiode. This method is effective. The dark current can degrade a lot after the growth of such a window layer. Also, the measured refractive index of the material is presented in this paper. It is useful for looking for the proper passivation material for GaInAsSb.

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; gallium compounds; indium compounds; infrared detectors; optical windows; photodetectors; photodiodes; semiconductor device measurement; 2 to 5 micron; AlGaAsSb; AlGaAsSb window layer; GaInAsSb-GaSb; GaInAsSb/GaSb long wavelength mid-IR detectors; GaInAsSb/GaSb photodiode; dark current suppression; passivation; refractive index; Dark current; Detectors; Etching; Fabrication; Molecular beam epitaxial growth; Packaging; Passivation; Photodetectors; Photonic band gap; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated-Circuit Technology, 2001. Proceedings. 6th International Conference on

Print_ISBN

0-7803-6520-8

Type

conf

DOI

10.1109/ICSICT.2001.982136

Filename

982136