Two dimension current transport of the novel large coupled optical cavity semiconductor lasers

In order to study the current transport of the novel semiconductor laser diode, which has several active regions cascaded by tunnel junctions, a two dimension model is built. By using the finite difference method, the current density and carriers within the device can be obtained. According to the simulation results, there exists a severe current spreading for the novel device, so we proposed a double-side strip structure to confine the carriers along the lateral direction. Experimental result shows that for a 4-active region laser combined with the double-side strip structure, the slop efficiency is as high as 2.97W/A, and an output power of 4.44W can be reached at 2A.