Title :
D4. Monte Carlo simulation of single electronics based on orthodox theory
Author :
Elabd, Ali A. ; Shalaby, Abdel-Aziz T. ; El-Rabaie, El-Sayed M.
Author_Institution :
Fac. of Electron. Eng., Minufiya Univ., Menouf, Egypt
Abstract :
In this paper, we present a detailed algorithm to compute the current-voltage characteristics of the single electron circuits by Monte Carlo method. Our simulator is designed to solve capacitance systems that contain tunnel junctions. The simulation process is based on orthodox theory. Single electron box, single electron transistor, electron pump and inverter circuits have been investigated, and the results are compared with the previous relevant literature.
Keywords :
Monte Carlo methods; invertors; power electronics; transistor circuits; Monte Carlo simulation; capacitance systems; current-voltage characteristics; electron pump; inverter circuits; orthodox theory; single electron circuits; single electron transistor; single electronics; tunnel junctions; Capacitance; Computational modeling; Educational institutions; Integrated circuit modeling; Junctions; Monte Carlo methods; Tunneling; MUSES; Monte Carlo simulation; Orthodox theory; Quantum tunneling; Single electron devices;
Conference_Titel :
Radio Science Conference (NRSC), 2012 29th National
Conference_Location :
Cairo
Print_ISBN :
978-1-4673-1884-6
DOI :
10.1109/NRSC.2012.6208569
