Title :
Analysis of the operating point of a novel multiple-active-region tunneling-regenerated vertical-cavity surface-emitting laser
Author :
Wenjun, Zhu ; Xia, Guo ; Peng, Lian ; Deshu, Zou ; Guo, Gao ; GuangDi, Shen
Author_Institution :
Beijing Optoelectronic Technol. Lab., Beijing Polytech. Univ., China
Abstract :
A novel multiple-active-region tunneling-regenerated vertical-cavity surface-emitting laser (VCSEL) with a greater-than-unity differential quantum efficiency is proposed. This novel VCSEL is expected to have an improved performance, specifically, reduced threshold current and heightened output power. The optimum reflectivity in terms of output power is determined for this novel VCSELs with fixed supply current and series resistance as a parameter. We compare the output power of the novel structure with that of the traditional structure at the same reflectivity and injected current. Also, we compare the threshold current of the novel structure with that of the traditional structure at the same reflectivity and output power. Finally, we prove the advantage of the novel structure in theory.
Keywords :
reflectivity; semiconductor lasers; surface emitting lasers; greater-than-unity differential quantum efficiency; injected current; multiple-active-region tunneling-regenerated VCSEL; operating point; output power; reflectivity; series resistance; threshold current; vertical-cavity surface-emitting laser; Laser theory; Optical losses; Optical pumping; Power generation; Radiative recombination; Reflectivity; Spontaneous emission; Surface emitting lasers; Threshold current; Vertical cavity surface emitting lasers;
Conference_Titel :
Solid-State and Integrated-Circuit Technology, 2001. Proceedings. 6th International Conference on
Print_ISBN :
0-7803-6520-8
DOI :
10.1109/ICSICT.2001.982141