Title :
X-band 5 watt GaAs MMIC power amplifier
Author :
Feng, Zhen ; Gao, Xue-Bang ; Wang, Cui-Qing
Author_Institution :
Hebei Semicond. Res. Inst., Shijiazhuang, China
Abstract :
This paper describes the design, fabrication and performance of a newly developed two-stage single chip power amplifying MMIC delivering 5 W output power at X-band with AlGaAs/GaAs Heterostructure FET (HFET), including the large signal model extraction of the HFET, the circuit CAD, the process research of MMICs, etc. The MMIC chip were fabricated and its RF measure results are: Pout≥37 dBm Gp≥11 dB at 9.5-10.6 GHz.
Keywords :
III-V semiconductors; MMIC power amplifiers; circuit CAD; field effect MMIC; gallium arsenide; integrated circuit design; integrated circuit modelling; 11 dB; 5 W; 9.5 to 10.6 GHz; AlGaAs-GaAs; AlGaAs/GaAs HFET; GaAs MMIC power amplifier; X-band MMIC; circuit CAD; fabrication; heterostructure FET; large signal model extraction; two-stage power amplifier; FETs; Fabrication; Gallium arsenide; HEMTs; MMICs; MODFETs; Power amplifiers; Power generation; Signal design; Signal processing;
Conference_Titel :
Solid-State and Integrated-Circuit Technology, 2001. Proceedings. 6th International Conference on
Print_ISBN :
0-7803-6520-8
DOI :
10.1109/ICSICT.2001.982145
