DocumentCode
2220161
Title
Measurement and simulation of IM distortion in high mobility transistors
Author
Qu, Guoli ; Parker, Anthony E.
Author_Institution
Electron. Dept., Macquarie Univ., Sydney, NSW, Australia
Volume
2
fYear
2001
fDate
22-25 Oct. 2001
Firstpage
1337
Abstract
This paper reports the characterisation of intermodulation (IM) distortion in high electron mobility transistors (HEMTs). The second- and third-order IM products in HEMT common-source amplifiers are measured and simulated comprehensively. The comparison of measured and simulated IM products as a function of gate-source voltage, drain-source voltage, input level as well as load impedance are reported. Excellent agreement between measurements and simulations is achieved.
Keywords
high electron mobility transistors; intermodulation distortion; semiconductor device measurement; semiconductor device models; HEMT common-source amplifiers; IM distortion; drain-source voltage; gate-source voltage; high electron mobility transistors; input level effects; intermodulation distortion; load impedance effects; second-order IM products; third-order IM products; Distortion measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State and Integrated-Circuit Technology, 2001. Proceedings. 6th International Conference on
Print_ISBN
0-7803-6520-8
Type
conf
DOI
10.1109/ICSICT.2001.982149
Filename
982149
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