Title :
Amplifier performance of dual emitter HBT for MMIC power amplifier applications
Author :
Lee, Y.S. ; Park, C.S.
Author_Institution :
Sch. of Eng., Inf. & Commun. Univ., Taejon, South Korea
Abstract :
A new emitter/base finger structure of InGaP/GaAs HBT has been designed as a unit cell for multi-finger integration, and evaluated the gain performance compared with the conventional emitter/base structure. We have designed a unit cell composed of 2 emitter fingers with 1 base finger (1B2E, dual emitter) and evaluated the performance compared with the conventional structure: the unit cell composed of 1 emitter finger and 2 base fingers (2B1E). 1B2E has several advantages compared to 2B1E: 2 times of collector current density, thermal stability, and high power gain.
Keywords :
III-V semiconductors; MMIC power amplifiers; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; power bipolar transistors; semiconductor device measurement; wide band gap semiconductors; 1B2E dual emitter; InGaP-GaAs; MMIC power amplifier applications; amplifier performance; collector current density; dual emitter HBT; emitter/base finger structure; gain performance; high power gain; multi-finger integration; thermal stability; Contact resistance; Design engineering; Doping; Fingers; Global warming; Heterojunction bipolar transistors; MMICs; Performance gain; Power amplifiers; Power engineering and energy;
Conference_Titel :
Solid-State and Integrated-Circuit Technology, 2001. Proceedings. 6th International Conference on
Print_ISBN :
0-7803-6520-8
DOI :
10.1109/ICSICT.2001.982151
