Title :
An optimized rapid thermal processor for GaAs annealing
Author :
Wu-Xia, Li ; Xun-Chun, Liu ; Su-Qin, Wang ; Run-Mei, Wang ; Ming-Xiong, Luo ; Long-Hai, Zhang
Author_Institution :
Microelectron. R&D Center, Chinese Acad. of Sci., Beijing, China
Abstract :
The distortion and evenness of GaAs wafer after annealing are critical parameters in micro-processing by projective aligner lithography. In this paper, we present an optimized rapid thermal processor and the excellent performance of GaAs MESFET we got with it. It shows that the simply developed processor can affectively improve the GaAs wafer evenness, which is important for projective photolithography.
Keywords :
III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; optimisation; photolithography; rapid thermal annealing; semiconductor device measurement; surface topography; GaAs; GaAs MESFET; GaAs annealing; GaAs wafer evenness; micro-processing; projective aligner lithography; projective photolithography; rapid thermal processor; Adhesives; Contamination; Gallium arsenide; Lamps; Lithography; Microelectronics; Rapid thermal annealing; Rapid thermal processing; Temperature distribution; Thermal stresses;
Conference_Titel :
Solid-State and Integrated-Circuit Technology, 2001. Proceedings. 6th International Conference on
Print_ISBN :
0-7803-6520-8
DOI :
10.1109/ICSICT.2001.982154
